PR message
Our company, WESTERN MINMETALS (SC) CORPORATION, has been dealing with Single Crystal Silicon and Semiconductor Compound Materials for over 20 years, and have been providing good services and qualified products to our customers in US, Japan, Germany, Canada, France, Israel and Russia etc, and very much like to expand our global partner range with your vital assistance.
Diameter: 50.8, 100, 150 mm
Growth Method: HEM
Crystal Orientation: (C-A) or (C-M)
Thickness: 430-1300 um
TTV: 15 um max
Bow & Warp: 30 um max
Front / Backside Finish: P/E P/P
Packing: in vacuum bag
Application: LED display, laser or optical window & lens, power semiconductors growing process
Diameter: 50.8, 100, 150 mm
Conductivity: N
Thickness: 4.5-20 um
Resistivity: <0.5, <0.1, <0.05 ohm-cm
Crystal Orientation: C-plane
TTV: 15 um max
Bow: 20 um max
Carrier Concentration: <5E17 cm-3
Hall Mobility: 300 cm2/v.s
Front / Backside Finish: P/E P/P
Packing: single wafer container
Application: electronic power devices, LED display industries
Diameter: 50.8, 76.2, 100, 150 mm
Growth Method: MOCVD
Conductivity: 4H-N, 6H-N, 4H-SI, 6H-SI
Thickness: 350-500 um
Resistivity: 0.015-0.1 or >100000 ohm-cm
Crystal Orientation: on or off axis
TTV: 15 um max
Bow: 40 um max
Warp: 60 um max
Front / Backside Finish: P/E P/P
Packing: single wafer container
Application: electronic power devices, LED display industries
Diameter: 50.8, 76.2, 100, 150 mm
Growth Method: LEC
Conductivity: P / N
Thickness: 500-800 um
Crystal Orientation: <100> <111>
Hall Mobility: 200-3500 cm2/v.s
Carrier Concentration: (1-100)E17 cm-3
TTV: 10 um max
Bow & Warp: 30 um max
Front / Backside Finish: P/E P/P
Packing: single wafer container
Application: optoelectronic or microelectronic industry
Diameter: 50.8, 76.2, 100, 150 mm
Growth Method: VGF
Conductivity: P / N / SI
Thickness: 350-625 um
Crystal Orientation: <100>
Hall Mobility: 50-5000 cm2/v.s
Carrier Concentration: 0.8-50 cm-3
TTV: 10 um max
Bow & Warp: 30 um max
Front / Backside Finish: P/E P/P
Packing: single wafer container
Application: optoelectronic or microelectronic industry
Diameter: 2" 3" 4" 5" 6"
Growing Method: FZ NTD
Conductivity: N
Crystal Orientation: <100>, <111>
Resistivity: 10-20, 20-30, 30-40 ohm-cm extra
Thickness: 279-675 um
TTV: 10 um max
Bow & Warp: 30 um max
Front/Backside Finish: Etched or Lapped
Packing: in foam box
Application: power rectifier, thyristor, GTO, MOSFET, IGBT, etc.
Diameter: 2" 3" 4" 5" 6"
Growing Method: FZ
Conductivity: P or N or SI
Crystal Orientation: <100>, <111>, <110>
Resistivity: 1-10000 ohm-cm
Thickness: 279-675 um
TTV: 10 um max
Bow & Warp: 30 um max
Front/Backside Finish: Lapped/Etched/Polished
Packing: in foam box or cassette
Application: power rectifier, thyristor, GTO, MOSFET, IGBT, etc.
Diameter: 2" 3" 4" 5" 6" 8" 12"
Growing Method: CZ
Conductivity: P or N or SI
Crystal Orientation: <100>, <111>, <110>
Resistivity: 0.001-100 ohm-cm
Thickness: 279-1000 um
TTV: 10 um max
Bow & Warp: 30 um max
Front/Backside Finish: Lapped/Etched/Polished
Packing: in foam box or cassette
Application: Epitaxial or SOI processing, IC, diode, transistors, discrete components
Company name | Western Minmetals (SC) Corporation | Website URL | http://www.matltech.com/ |
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Street address |
Cheng'du Sichuan People's Republic of China
[See map] |
Person in charge | Tony Fu |
Telephone number | Log in to display | Fax number | Log in to display |
Capital | 1,000,000 $ | Employees | 10 |
Annual sales | Unregister | EMIDAS Member Number | 92182 |
Type of manufacturing | Electrical component for transportation equipment / Industrial machinery | ||
Main 3 products |
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